KSD1692 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت KSD1692	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: onsemi KSD1692YS
Transistor Type: NPN
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 3A
Power Dissipation (Pd): 1.3W
Transition frequency (fT): -
DC current gain (hFE@Vce,Ic): 4000@2V,1.5A
Collector-emitter voltage (Vceo): 100V
Collector cut-off current (Icbo@Vcb): 10uA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.2V@1.5A,1.5mA
Package: TO-126-3
Manufacturer: onsemi
Series: -
Packaging: Bulk
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1.5A, 2V
Power - Max: 1.3W
Frequency - Transition: -
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: KSD1692
detail: Bipolar (BJT) Transistor NPN - Darlington 100V 3A 1.3W Through Hole TO-126-3